AP30G120ASW Datasheet PDF - 1200V, 30A, IGBT, Transistor

Part Number: AP30G120ASW

Function: 1200V, 30A, N-CHANNEL IGBT

Package: TO-3P Type

Image and Pinouts:

Description

This is INSULATED GATE BIPOLAR TRANSISTOR.

1. High Speed Switching

2. Low Saturation Voltage

3. CO-PAK, IGBT With FRD

4. RoHS Compliant

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 30 A

4. Collector dissipation : Pd = 208 W (Tc = 25°C)

5. Junction temperature : Tj = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: 30G120ASW, AP30G120