AP30G120ASW Datasheet PDF – 1200V, 30A, IGBT, Transistor

Part Number : AP30G120ASW

Function : 1200V, 30A, N-CHANNEL IGBT

Package : TO-3P Type

Manufacturers : Advanced Power Electronics Corp

Image and Pinouts :
AP30G120ASW datasheet

Description :

This is INSULATED GATE BIPOLAR TRANSISTOR.

Features :

1. High Speed Switching

2. Low Saturation Voltage

3. CO-PAK, IGBT With FRD

4. RoHS Compliant

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 1200 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 30 A

4. Collector dissipation : Pd = 208 W (Tc = 25°C)

5. Junction temperature : Tj = -55 to +150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : 30G120ASW, AP30G120

AP30G120ASW Datasheet PDF Download

AP30G120ASW pdf