Part Number: ATF35176
Function: 2 – 18 GHz Low Noise Psudomorphic HEMT
Package: 76 Style
Manufacturer: Hewlett Packard
Images:
Description
The ATF-35076, -35176 and -35376 are noise performace differentialed versions of the high performace ATF-35 Pseudomorphic High Electron Mobility Transsitor ( PHEMT ), housed in the Style 76 cost effective, ceramic microstip package. The ATF-35076 offers premium noise figure and is an ideal choice for use in the first stage of extremely low noise cascades. The sightly higher noise figure fo the ATF35176 makes it approprite for use in the second stage of premium cascades or as the first stage in amplifiers that have less critical noise requirements.
Features
1. PHEMT Technology
2. Low Noise Figure : 0.75 Typical at 12 GHz
3. High Associated Gain : 11 dB Typical at 12 GHz
4. Cost Effective Ceramic Microstrip package
5. Tape-and-Reel Packagin Option Available
Pinout
Absolute maximum ratings
1. Drain-Source Voltage : Vds = +4 V
2. Gate-Source Voltage : Vgs = -3 V
3. Drain Current : Id = Ldss
4. Total Power Dissipation : Pt = 225 mW
5. Channel Temperature : Tch = 150°C
6. Storage Temperature : Tstg = -65 to 150°C
Other data sheets are available within the file: ATF35076, ATF35276, ATF-35076, ATF-35176, ATF-35376
ATF35176 Datasheet PDF Download
