Part Number: B1115
Function: – 50V, – 1A, PNP Silicon Epitaxial Transistor
Package: Power Mini Mold
Manufacturer: NEC (Renesas Technology)
Image and Pinouts:
Description
The B1115, 2SB1115, 2SB1115A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.
Features
1. Low Vce(sat), Vce(sat) = – 0.2 at 1A
2. Complement to 2SD1615, 2SD1615A
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 50 V
3. Emitter to Base Voltage: Vebo = – 6 V
4. Collector Current: Ic = – 1 A
5. Total Power Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Other data sheets are available within the file: 2SB1115, 2SB1115A, B1115A
B1115 Datasheet PDF Download
