Part Number : B1115
Function : – 60V, PNP Silicon Epitaxial Transistor
Package : Power Mini Mold
Manufacturers : NEC (Renesas Technology)
Image and Pinouts :
Description :
The B1115, 2SB1115, 2SB1115A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.
Features :
1. Low Vce(sat), Vce(sat) = – 0.2 at 1A
2. Complement to 2SD1615, 2SD1615A
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = – 60 V
2. Collector to Emitter Voltage : Vceo = – 50 V
3. Emitter to Base Voltage : Vebo = – 6 V
4. Collector Current : Ic = – 1 A
5. Total Power Dissipation : Pc = 2 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Other data sheets within the file : 2SB1115, 2SB1115A, B1115A
B1115 Datasheet PDF Download
