B647 Datasheet PDF – 80V, 1A, PNP Transistor – 2SB647

Part Number : B647, 2SB647

Function : -80V, -1A, PNP Transistor

Package : TO-92MOD Type

Manufactures : Hitachi Semiconductor

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Description :

This is Silicon PNP Epitaxial Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = – 120 V

2. Collector to Emitter Voltage : Vceo = – 80 V

3. Emitter to Base Voltage : Vebo = – 5 V

4. Collector Current : Ic = – 1 A

5. Collector Power Dissipation : Pc = 0.9 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperature : Tsg = -55 ~ +150°C

 

Application :

1. Low frequency power amplifier

2. Complementary pair with 2SD667/A

Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 –2 0.9 150 –55 to +150 2SB647A –120 –100 –5 –1 –2 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) 2SB647 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1- hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A  […]

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B647 Datasheet