B647 Datasheet – 2SB647 Silicon PNP Epitaxial Transistor

Part Number : B647

Function : 2SB647

Manufactures : Hitachi Semiconductor

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Description :

2SB647, 2SB647A Silicon PNP Epitaxial Application
• Low frequency power amplifier
• Complementary pair with 2SD667/A Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1 2SB647,

B647 Absolute Maximum Ratings (Ta = 25°C)

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 –2 0.9 150 –55 to +150 2SB647A –120 –100 –5 –1 –2 0.9 150 –55 to +150 Unit V V V A A W °C °C

Electrical Characteristics (Ta = 25°C) 2SB647

Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max Min — 10 320 — 1 Typ Max Unit

Test conditions —10 200 — 1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 Typ –120  –80 –5 — 60 30 — 140 20 –120 — 100 —5 — 60 30 — 140 20 –1.5 —1.5 V  — MHz VCE = –5 V, IC = –150 mA pF VCB = –10 V, IE = 0 f = 1 MHz Collector output capacitance Cob

Notes:

1. The 2SB647 and 2SB647A are grouped by h FE1 as follows.

2. Pulse test B 2SB647 2SB647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — 2 2SB647, 2SB647A Maximum Collector Dissipation Curve

1.2 Collector power dissipation PC (W) Collector current IC (A) Typical Output Characteristics –1.0 –0.8 –120 0 –10 8 – 0 –60 –40 –30 20 – –10 –5 –2 0.8 –0.6 –0.4 0.4 –0.2 PC = 0. –1 9W –0.5mA IB = 0 0 50 100 Ambient Tmperature Ta (°C) 150 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics –500 DC current transfer ratio hFE –200 Collector current IC (mA) –100 VCE = –5 V Pulse 600 500 400 300 200 100 0 –1 DC Current Transfer Ratio vs. Collector Current VCE = –5 V Pulse 5°C –50 –20 –10 –5 –2 –1 0 Ta = 7 25 –25 Ta = 75° C 25 –25 –0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage VBE (V) –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) 3 2SB647, 2SB647A Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0 –1.2 –1.0 IC = 10 IB Pulse –0.8 VBE(sat) Ta = –25°C 25 75 –0 […]

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B647 Datasheet