Part Number: BD140
Function: -80V, -1.5A, PNP power transistor
Package: TO-126, SOT32 type
Manufacturer: NXP
Images:
Description
The BD140 is -80V, -1.5A, PNP power transistor in a TO-126; SOT32 plastic package.
NPN complements: BD135, BD137 and BD139.
A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.
Here are characteristics of PNP transistors:
1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).
2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.
3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.
Features
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 100 V
2. Collector to Emitter Voltage: Vceo = – 80 V
3. Emitter to Base Voltage: Vebo = – 50 V
4. Collector Current: Ic = – 1.5 A
5. Total Power Dissipation: Ptot = 8 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperatue: Tsg = -65 ~ +150°C
Applications:
• General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.
BD140 PDF Datasheet
