Part Number: BDX33B
Function: 80V, 10A, NPN Transistor
Package: TO-220 Type
Manufacturer: ON Semiconductor
Image and Pinouts:
Description:
This is 80V, 10A, Darlington Complementary Silicon Power Transistor.
Features:
1. High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
2. Collector−Emitter Sustaining Voltage at 100 mAdc
(1) VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
3. Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C
4. Monolithic Construction with Build−In Base−Emitter Shunt Resistors
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 80 V
2. Collector to Emitter Voltage: Vceo = 80 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 10 A
5. Total Device Dissipation: Pd = 70 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Applications:
These devices are designed for general purpose and low speed switching applications.
BDX33B Datasheet PDF Download
Other data sheets are available within the file: BDX33BG, BDX33C, BDX33CG, BDX34B