BDX54C Datasheet – 100V, PNP Complementary Transistor

Part Number : BDX54C

Function : DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR

Package : TO-220AB Type

Manufacturers : ON Semiconductor

Pinouts :

BDX54C datasheet

 

Description

Plastic Medium-Power Complementary Silicon Transistor. These devices are designed for general−purpose amplifier and low-speed switching applications.

Features

1. High DC Current Gain − hFE= 2500 (Typ) @ IC= 4.0 Adc

2. Collector Emitter Sustaining Voltage −@ 100 mAdc
(1) VCEO(sus)= 80 Vdc (Min) −BDX53B, 54B
(2) VCEO(sus)= 100 Vdc (Min) −BDX53C, 54C

3. Low Collector−Emitter Saturation Voltage −
(1) VCE(sat)= 2.0 Vdc (Max) @ Ic= 3.0 Adc
(2) VCE(sat)= 4.0 Vdc (Max) @ Ic= 5.0 Adc

4. Monolithic Construction with Built−In Base−Emitter Shunt Resistors
5. Pb−Free Packages are Available

Maximum Ratings

1. Collector-Emitter Voltage : Vceo = 100 Vdc
2. Collector-Base Voltage : Vcb = 100 Vdc
3. Emitter-Base Voltage : Veb = 5.0 Vdc
4. Total Device Dissipation : Pd = 65 W

 

BDX54C Datasheet PDF

BDX54C pdf

Other data sheets within the file : BDX53B, BDX53BG, BDX53CG, BDX54B, BDX54BG