Part Number : BF981
Function : SILICON N-CHANNEL DUAL GATE MOS-FET
Package : SOT-103 Type
Manufactures : Philips Semiconductors
Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications, such as v.h.f. television tuners, f.m. tuners and professional communication equiment. This MOSFET tetrode is protected against excessive input voltage surges by integrated back-to-back didodes between gates and source.
1. Drain-source voltage : Vds = max. 20V
2. Drain current : Id = max. 20mA
3. Total power dissipation up to Tamb = 75’C : Ptot = max. 225mW