BLF245 Datasheet PDF – 65V, 6A, VHF Power MOS Transistor

Part Number: BLF245

Function: VHF power MOS transistor

Package: SOT123A, Flanged ceramic package; 2 mounting holes; 4 leads

Manufacturer: NXP Semiconductors.

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BLF245 datasheet

 

Description:

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

Pinout:

1. drain  2. source  3. gate  4. source

BLF245 pinout

 

 

Features:

1. High power gain

2. Low noise figure

3. Easy power control

4. Good thermal stability

5. Withstands full load mismatch.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 6 A
4. Total Power Dissipation : Ptot = 68 W
5. junction temperature : Tch = 200 °C
6. Storage temperature: Tstg = -65 to +150 °C

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BLF245 Datasheet PDF Download

BLF245 pdf

Other data sheets are available within the file:  BLF-245