Part Number: BLF245
Function: VHF power MOS transistor
Package: SOT123A, Flanged ceramic package; 2 mounting holes; 4 leads
Manufacturer: NXP Semiconductors.
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Description:
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.
Pinout:
1. drain 2. source 3. gate 4. source
Features:
1. High power gain
2. Low noise figure
3. Easy power control
4. Good thermal stability
5. Withstands full load mismatch.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 6 A
4. Total Power Dissipation : Ptot = 68 W
5. junction temperature : Tch = 200 °C
6. Storage temperature: Tstg = -65 to +150 °C
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BLF245 Datasheet PDF Download
Other data sheets are available within the file: BLF-245