Part Number : BLF245
Function : VHF power MOS transistor
Package : SOT123A, Flanged ceramic package; 2 mounting holes; 4 leads
Manufacturers : NXP Semiconductors.
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap.
Pinout : 1. drain 2. source 3. gate 4. source
DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcation VHF power MOS transistor FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. g MBB072 BLF245 PIN CONFIGURATION lfpage 1 4 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING – SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION 2 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety – toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 30 Gp (dB) > 13 ηD (%) > 50 September 1992 2 Philips Semiconductors Product speciﬁcation VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C VGS = 0 VDS = 0 COND [ … ]
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