BLF246 Datasheet PDF – VHF Power MOS Transistor

Part Number : BLF246

Function : VHF power MOS transistor

Package : SOT121 type

Manufacturers : Philips Electronics

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BLF246 datasheet

 

Description :

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange.

 

Pinout : 1. drain  2. source  3. gate  4. source

BLF246 pinout

 

Text :

DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING – SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information. 2 3 d g s MAM267 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 28 PL (W) 80 Gp (dB) ≥16 ηD (%) ≥55 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety – toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 21 2 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gat [ … ]

 

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