Part Number : BLH3355
Function : NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Manufacturers : Unspecified
Pinouts :
Description :
Planar type
Electrodes: Aluminum alloy
Backside metal: Au alloy
Chip size: 370µm ×370µm
Chip thickness: 220±20µm.
Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
VCBO Collector to Base Voltage : 20 V
VCEO Collector to Emitter Voltage : 12 V
VEBO Emitter to Base Voltage : 3.0 V
IC Collector Current : 100 mA
Ptot Total Power Dissipation : 200 mW
Tj Junction Temperature : 150 °C
Tstg Storage Temperature : −65 to +150 °C
BLH3355 Datasheet PDF Download
Other data sheets within the file :
BLH3355