Part Number: BLH3355
Function: 12V, 100mA, NPN EPITAXIAL SILICON RF TRANSISTOR
Pakcage : Chip type or TO-92 Type
Manufacturer: SHANGHAI BELLING ( http://www.belling.com.cn )
Pinouts:
Description
This is NPN RF Transistor. NPN epitaxial silicon RF transistor for microwave low-noise amplification.
Features
1. Low noise and high gain bandwidth product
2. High power gain
Structure :
1. Planar type
2. Electrodes: Aluminum alloy
3. Backside metal: Au alloy
Size :
1. Chip size: 370µm ×370µm
2. Chip thickness: 220±20µm.
3. Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
1. VCBO Collector to Base Voltage : 20 V
2. VCEO Collector to Emitter Voltage : 12 V
3. VEBO Emitter to Base Voltage : 3.0 V
4. IC Collector Current : 100 mA
5. Ptot Total Power Dissipation: 200 mW
6. Tj Junction Temperature : 150 °C
7. Tstg Storage Temperature: −65 to +150 °C
Applications:
1. UHF / VHF wide band amplifier
Other data sheets are available within the file: BLH-3355
BLH3355 Datasheet PDF Download
