Part Number : BLH3355
Function : 12V, 100mA, NPN EPITAXIAL SILICON RF TRANSISTOR CHIP
Manufacturers : SHANGHAI BELLING ( http://www.belling.com.cn )
Pinouts :
Description :
1. Planar type
2. Electrodes: Aluminum alloy
3. Backside metal: Au alloy
4. Chip size: 370µm ×370µm
5. Chip thickness: 220±20µm.
6. Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
1. VCBO Collector to Base Voltage : 20 V
2. VCEO Collector to Emitter Voltage : 12 V
3. VEBO Emitter to Base Voltage : 3.0 V
4. IC Collector Current : 100 mA
5. Ptot Total Power Dissipation: 200 mW
6. Tj Junction Temperature : 150 °C
7. Tstg Storage Temperature: −65 to +150 °C
Other data sheets within the file : BLH-3355
BLH3355 Datasheet PDF Download
