BLH3355 Datasheet PDF – 12V, 100mA, NPN Transistor

Part Number : BLH3355

Function : 12V, 100mA, NPN EPITAXIAL SILICON RF TRANSISTOR

Pakcage : Chip type or TO-92 Type

Manufacturers : SHANGHAI BELLING ( http://www.belling.com.cn )

Pinouts :

BLH3355 datasheet

 

Description :

This is NPN RF Transistor. NPN epitaxial silicon RF transistor for microwave low-noise amplification.

Features :

1. Low noise and high gain bandwidth product
2. High power gain

Structure :

1. Planar type
2. Electrodes: Aluminum alloy
3. Backside metal: Au alloy

BLH3355 transistor

Size :

1. Chip size: 370µm ×370µm
2. Chip thickness: 220±20µm.
3. Pad size: φ100µm

ABSOLUTE MAXIMUM RATING

1. VCBO Collector to Base Voltage : 20 V
2. VCEO Collector to Emitter Voltage : 12 V
3. VEBO Emitter to Base Voltage : 3.0 V
4. IC Collector Current : 100 mA
5. Ptot Total Power Dissipation: 200 mW
6. Tj Junction Temperature : 150 °C
7. Tstg Storage Temperature: −65 to +150 °C

Applications :

1. UHF / VHF wide band amplifier

Other data sheets within the file : BLH-3355

 

BLH3355 Datasheet PDF Download

BLH3355 pdf