BSS123 Datasheet – BVdss = 100V, N-Channel MOSFET

Part Number : BSS123


Package : SOT23 Type

Manufacturers : Diodes Incorporated.

Pinouts :

BSS123 datasheet


Description :

These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These productshave been designed to minimizon-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltagelow current applications such as:

Features and Benefits
1. Low Gate Threshold Voltage
2. Low Input Capacitance
3. Fast Switching Speed
4. Low Input/Output Leakage
5. High Drain-Source Voltage Rating
6. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
7. Halogen and Antimony Free. “Green” Device (Note 3)
8. Qualified to AEC-Q101 Standards for High Reliability


Mechanical Data

1. Case: SOT23
2. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
3. Moisture Sensitivity: Level 1 per J-STD-020
4. Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
5. Terminal Connections: See Diagram
6. Weight: 0.008 grams (Approximate)


BSS123 Datasheet PDF Download

BSS123 pdf

Other data sheets within the file : BSS123-7-F, BSS123Q-13, BSS123Q-7