BSS84AK Datasheet – 50V, 180mA, P-Ch, MOSFET, Transistor

Part Number: BSS84AK

Marking : %VS

Function: 50 V, 180 mA P-channel Trench MOSFET

Package: SOT-23, TO-236AB Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BSS84AK datasheet

 

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

1. Logic-level compatible

2. Very fast switching

3. Trench MOSFETtechnology

4. ESD protection up to 1 kV

5. AEC-Q101 qualified

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 180 mA

4. Total Power Dissipation : Pch = 350 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

 

Applications:

1. Relay driver

2. High-speed line driver

3. High-side loadswitch

4. Switching circuits

Other data sheets are available within the file: BSS84A, BSS84

 

BSS84AK Datasheet PDF Download


BSS84AK pdf