BSS84AKV Datasheet – 50V, 170mA, P-Ch, MOSFET, Transistor

Part Number : BSS84AKV

Marking : EG

Function : 50 V, 170 mA dual P-channel Trench MOSFET

Package : SOT-666 Type

Manufacturers : NXP Semiconductors.

Pinouts :

BSS84AKV datasheet

 

Description :

This is a MOSFET. Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

1. Logic-level compatible

2. Very fast switching

3. Trench MOSFETtechnology

4. ESD protection up to 1 kV

5. AEC-Q101 qualified

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = – 50 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = – 170 mA

4. Total Power Dissipation : Ptot = 330 mW

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : BSS84AK, BSS84A, BSS84

 

BSS84AKV Datasheet PDF Download


BSS84AKV pdf