BUH516 Datasheet – 1600V, NPN Transistor – ST

Part Number : BUH516 ( = BU508AFI, THD277HI, 3DD3402 )

Function : NPN Silicon Multiepitaxial Mesa Transistor, 600V, 8A

Package : ISOWATT218 type

Manufacturers : STMicroelectronics

Image :BUH516

Description

This device is manufactured using Multiepitaxial Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure to enhance switching speeds

Features

1. High voltage, high speed
2. Low collector saturation voltage

Applications

1. Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors.
2. Switching power supplies for TV’s and monitors.

Pinout

BUH516 pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1700 V
2. Collector to Emitter Voltage : Vceo = 600 V
3. Emitter to Base Voltage : Vebo = 6 V
4. Collector Current : Ic = 8 A
5. Junction Temperature : Tj = 150°C
6. Storage Temperatue : Tsg = -55 ~ +150°C

BUH516 Datasheet

Reference BUH517 PDF : 1700V, 60W  [ BUH517.PDF ]