Part Number : BUK9506-55B
Function : 5V, 146A, N-channel Trench MOSFET
Package : TO-220AB Type
Manufacturers : NXP Semiconductors.
Pinouts :
Description :
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features :
1. TrenchMOS technology
2. Q101 compliant
3. 175 °C rated
4. Logic level compatible.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 55 V
2. Gate to source voltage : VGSS = ± 15 V
3. Drain current : ID = 146 A
4. Total Power Dissipation : Pd = 258 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +175 °C
Applications :
1. Automotive systems
2. 12 V and 24 V loads
3. Motors, lamps and solenoids
4. General purpose power switching
Other data sheets within the file : BUK950655B, BUK9606-55B, BUK9E06-55B
BUK9506-55B Datasheet PDF Download
