BUT11AF Datasheet – Vceo=450V, NPN Transistor – Philips

Part Number : BUT11AF

Function : Silicon Diffused Power Transistor

Package :  SOT186 Type

Manufactures : Philips Semiconductors

Image

but11af-npn-transistor

Description

High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Pinout

but11af-datasheet-pinout

 

Quick Reference Data

1. Collector-emitter voltage peak value (VBE = 0 V) : VCESM = 1000 V

2. Collector-emitter voltage (open base) : VCEO = 450 V

3. Collector current (DC) : IC = 5 A

4. Collector current peak value : ICM = 10 A

5. Total power dissipation (Ths < 25 °C) : Ptot = 20 W

6. Collector-emitter saturation voltage : VCEsat = 1.5 V

 

BUT11AF Datasheet

BUT11AF pdf