BUT11APX Datasheet – Vcbo=1000V, NPN Transistor – NXP

Part Number : BUT11APX

Function : Silicon Diffused Power Transistor

Package : SOT186A Type

Manufactures : Philips, NXP

Image

but11apx-npn-transistor

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Pinout

but11apx-datasheet-pinout

 

Quick Reference Data

1. Collector-emitter voltage peak value (VBE = 0 V) : VCESM = 1000 V

2. Collector-Base voltage (open emitter) : VCBO = 1000 V

3. Collector-emitter voltage (open base) : VCEO =  450 V

4. Collector current (DC) : IC = 5 A

5. Collector current peak value : ICM = 10 A

6. Total power dissipation (Ths < 25 °C) : Ptot = 32 W

7. Collector-emitter saturation voltage : VCEsat = 1.5 V

8. Collector saturation current : ICsat = 3.5 A

 

BUT11APX Datasheet