Part Number: C1815
Function: 50V, 150mA, Silicon NPN Epitaxail Type Transistor
Package: TO-92 Type
Manufacturer: Toshiba Semiconductor
Description
C1815 is 50V, 150mA, NPN Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
Features
1. Complement to KSA1015
2. Collector-Base Voltage : VCBO= 50V
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 150 mA
5. Collector Dissipation : Pc = 400 mW
6. Junction Temperature: Tj = 125°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. Audio Frequency General Purpose Amplifier
