Part Number: C1970
Function: 17V, 0.6A, NPN Transistor
Package: TO-220 Type
Manufacturer: MITSUBISHI ELECTRIC
Image and Pinouts:
Description
This is 17V, 0.6A, NPN Epitaxial Planar Type Transistor.
The C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF
band mobile radio applications.
Features
1. High Power Gain
2. High Reliability
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 40 V
2. Collector to Emitter Voltage: Vceo = 17 V
3. Emitter to Base Voltage: Vebo = 4 V
4. Collector Current: Ic = 0.6 A
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Application circuits :
Other data sheets are available within the file: 2SC1970
C1970 Datasheet PDF Download