C1971 Datasheet – 35V, 2A, NPN RF Transistor – Mitsubishi

This is one of the transistor types.

Part Number: C1971, 2SC1971


Package:  TO-220 Pin type

Manufacturer: Mitsubishi


C1971 NPN transistor



The C1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifer on VHF band mobile radio applications.

The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.


1. High power gain : Gpe >= 10dB

2. Emitter ballasted contruction, gold metallization for high reliability and good performances

3. Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 15.2V, Po=6W, f = 175Mhz



C1971 datasheet pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 2 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. 4 to 5 watts output power amplifiers in VHF band applications


C1971 Datasheet PDF


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