Part Number: C2166, 2SC2166
Function: 75V, 4A, Silicon NPN Power Transistor
Package: TO-220 Type
Manufacturer: Mitsubishi Electric Semiconductor
The C2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.
1. High power gain : Gpe ≥ 13.8 dB
2. Emitter ballasted construction for high reliability and good performances.
3. TO-220 similar package is combinient for mounting
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 75 V
2. Collector to Emitter Voltage: Vceo = 75 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 4 A
5. Collector Dissipation : Pc = 1.5 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
1. 3 to 4 watts output power amplifiers in HF band mobile radio applications.