C2229 Datasheet – Vceo=150V, 50mA, NPN Transistor – Toshiba

Part Number : C2229, 2SC2229

Funtion : Silicon NPN Triple Diffused Type (PCT Process)

Manufactures : Toshiba

Image

C2229 npn transistor

Description

1. High breakdown voltage: VCEO= 150 V (min)

2. Low output capacitance: Cob= 5.0 pF (max)

3.  High transition frequency: fT= 120 MHz (typ.)

Applications

1. Black and White TV Video Output

2. High-Voltage Switching

3. Driver Stage Audio Amplifier

 

PInout

C2229 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-base voltage  : VCBO = 200 V

2. Collector-emitter voltage  : VCEO = 150 V

3. Emitter-base voltage  : VEBO = 5 V

4. Collector current  : IC = 50 mA

5. Base current  : IB = 20 mA

6. Collector power dissipation  : PC = 800 mW

 

C2229 Datasheet