C2229 PDF – 150V, 50mA, 2SC2229 Transistor – Toshiba

Part Number: C2229, 2SC2229

Function: 150V, 50mA, NPN Transistor.

Package: TO-92MOD Type

Manufacturer: Toshiba

Images:C2229 pinout datasheet

Description

C2229 is 150V, 50mA, Silicon NPN Triple Diffused Type Transistor.

A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

 

Features

• High breakdown voltage: VCEO = 150 V (min)

• Low output capacitance: Cob = 5.0 pF (max)

• High transition frequency: fT = 120 MHz (typ.)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 150 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 800 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C2229 pdf transistor

Applications:

1. Black and White TV Video Output

2. High-Voltage Switching

3. Driver Stage Audio Amplifier

C2229 PDF Datasheet

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