C3021 Datasheet PDF – Vcbo=35V, 2A, NPN Transistor

Part Number : C3021

Function : RF Power NPN Epitaxial Planar Type Transistor

Package : T-31E Type

Manufacturers : MITSUBISHI ELECTRIC

Pinouts :

C3021 datasheet

 

Description :

C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.

Features

1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W
2. Emitter ballasted construction
3. Flange type ceramic package

Absolute maximum ratings

1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector current : Ic = 2A
5. Collector dissipation : Pc = 20 W

Application

For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.

 

Other data sheets within the file : 2SC3021

C3021 Datasheet PDF Download


C3021 pdf