C5353 Datasheet – 900V, NPN Transistor (TO-220)

Part Number : C5353,  2SC5353

Description : Silicon NPN Triple Diffused Type (PCT process)

Package : TO-220 Type

Manufactures : Toshiba

Image :

C5353 Image

Features

1.  Excellent switching times: tr= 0.7 μs (max), tf= 0.5 μs (max)
2.  High collectors breakdown voltage: VCEO= 800 V

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 900 V
2. Collector to Emitter Voltage : Vceo = 800 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 3A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

Pinouts :

C5353 Pinout

Applications

1. Switching Regulator and High Voltage Switching
2. High-Speed DC-DC Converter

C5353 Datasheet

C5353 Datasheet