C5387 PDF Datasheet – 600V, 10A, NPN Transistor – 2SC5387

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Part Number: C5387, 2SC5387

Function: 600V, 10A, NPN Transistor

Package: TO-3ML Type

Manufacturer: Toshiba Semiconductor

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Description:

2SC5387 IS SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR.

Features:

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)

3. High Speed : tf = 0.15 μs (Typ.)

4. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 10 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION

2. DISPLAY, COLOR TV

3. HIGH SPEED SWITCHING APPLICATIONS

ELECTRICAL CHARACTERISTICS (Tc = 25°C) :

CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST MHz pF μs Marking TOSHIBA C5387 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-22

 

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerabilit […]

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C5387 Datasheet