Part Number: C945P, 2PC945P
Function: 50V, 100mA, NPN Transistor
Package: TO-92 Type
Manufacturer: NXP, NEC
The C945P is designed for use in driver stage of AF amplifier and low speed switching.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. High voltage LVCEO = 50 V MIN.
2. Excellent hFE linearity : hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 100 mA
5. Total Power Dissipation : Pc = 250 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.
2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.
3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.