G80N60 Datasheet – Vces = 660V, Ultrafast IGBT – Fairchild

This is one of the IGBT types.

This part name is G80N60.

This product has Ultrafast IGBT ( Vces = 600V ) functions.

Manufacturers of product is Fairchild Semiconductor.

See the preview image and the PDF file for more information.

Image :

G80N60 image

 

Description :

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60 datasheet pinout

Features

1. High speed switching
2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A
3. High input impedance
4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

Absolute Maximum Ratings TC = 25°C

1. Collector-Emitter Voltage : Vces = 600 V
2. Gate-Emitter Voltage : Vges = ± 20 V
3. Collector Current : Ic = 80 A
4. Maximum Power Dissipation : Pd = 195 W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

G80N60 Datasheet PDF Download

G80N60 pdf

 

Other data sheets within the file :  G80N60UFD, SGH80N60UFD

C5027 Datasheet – Vceo = 800V, 3A, NPN Transistor – Fairchild

Part Number : C5027, KSC5027

Function : NPN Silicon Transistor

Package : TO-220 Type

Manufacturers : Fairchild Semiconductor

Image

C5027 image

Description :

1. High Voltage and High Reliability
2. High Speed Switching
3. Wide SOA

Pinouts

C5027 datasheet

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1100 V
2. Collector to Emitter Voltage : Vceo = 800 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 3 A
5. Total Dissipation : Pc =50 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

Other data sheets within the file :KSC5027

C5027 Datasheet PDF Download

C5027 pdf