This is one of the MOSFET types. This is a kind of the transistor.
Part Number : CS150N03
Function : Silicon N-Channel Power MOSFET ( 30V, 150A )
Package : TO-220AB Type
Manufactures : WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
( http://www.crhj.com.cn )
Image
Description :
CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard
Features
1. Fast Switching
2. LowON Resistance(Rdson≤3.5mΩ)
3. Low Gate Charge (Typical Data:75nC)
4. Low Reverse transfer capacitances(Typical:800pF)
5. 100%Single Pulse avalanche energy Test
Applications： UPS, Inverter, Lighting
Pinouts :
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 150 A
4. Drain power dissipation : PD = 100 W
5. Single pulse avalanche energy : Eas =1300 mJ
6. Channel temperature : Tch = -55 to +175 °C
7. Storage temperature : Tstg = -55 to +175 °C
Physical Size (H x V x D) : 358.5(H) x 296.5(V) Typ. x 15.8(D) Max [mm]
Manufactures : Auo ( AU Optronics )
Image
Description :
This specification applies to the 17 inch Color TFT-LCD Module M170EG01.
The display supports the W SXGA+ (1280(H) x 1024(V)) screen format and 16.7M colors (RGB 6-bits+Hi-RFC data). All input signals are 2 Channel LVDS interface compatible. This module does not contain an inverter card for backlight.
Display Characteristics
1. Screen Diagonal [mm] : 432 (17.0”)
2. Active Area [mm] : 337.920(H) × 270.336(V)
3. Pixels H x V : 1280 × 3(RGB) × 1024
4. Pixel Pitch [mm] : 0.264(per one triad) × 0.264
5. Pixel Arrangement : R.G.B. Vertical Stripe
6. Display Mode : Normally White
7. White Luminance [cd/m2] : 650 (center,Typ)@7.5 mA
8. Contrast Ratio : 800 : 1 (Typ)
9. Power Consumption [Watt] : 25.8 W (Typ)
10. Weight [Grams] : 2100 Max.
Pinouts :
The module using a pair of LVDS receiver SN75LVDS82(Texas Instruments) or compatible. LVDS is a
differential signal technology for LCD interface and high speed data transfer device. Transmitter shall be SN75LVDS83(negative edge sampling) or compatible. The first LVDS port(RxOxxx) transmits odd pixels while the second LVDS port(RxExxx) transmits even pixels.
1 RxO0- Negative LVDS differential data input (Odd data)
2 RxO0+ Positive LVDS differential data input (Odd data)
3 RxO1- Negative LVDS differential data input (Odd data)
4 RxO1+ Positive LVDS differential data input (Odd data)
5 RxO2- Negative LVDS di fferential data input (Odd data, H -Sync,V-Sync,DSPTMG)
6 RxO2+ Positive LVDS differential data input (Odd data, H -Sync,V-Sync,DSPTMG)
7 GND Power Ground
8 RxOC- Negative LVDS differential clock input (Odd clock)
9 RxOC+ Positive LVDS differential clock input (Odd clock)
10 RxO3- Negative LVDS differential data input (Odd data)
11 RxO3+ Positive LVDS differential data input (Odd data)
12 RxE0- Negative LVDS differential data input (Even clock)
13 RxE0+ Positive LVDS differential data input (Even data )
14 GND Power Ground
15 RxE1- Positive LVDS differential data input (Even data)
16 RxE1+ Negative LVDS differential data input (Even data)
17 GND Power Ground
18 RxE2- Negative LVDS differential data input (Even data)
19 RxE2+ Positive LVDS differential data input (Even data)
20 RxEC- Negative LVDS differential clock input (Even clock)
21 RxEC+ Positive LVDS differential clock input (Even clock)
22 RxE3- Negative LVDS differential data input (Even data)
23 RxE3+ Positive LVDS differential data in put (Even data)
24 GND Power Ground
25 GND Power Ground
26 NC No contact (For AUO test only)
27 GND Power Ground
28 VCC +5.0V Power Supply
29 VCC +5.0V Power Supply
30 VCC +5.0V Power Supply
