Part Number : K2529
Function : 50A, 60V, Silicon N-Channel MOSFET
Package : TO-220CFM type
Manufacturers : Hitachi ( Renesas Electronics )
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Features
1. Low on-resistance
2. RDS(on) = 7 mΩ typ.
3. High speed switching
4. 4 V gate drive device can be driven from 5 V source
Pinouts :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 174 mJ
8. Channel dissipation : Pch = 35 W
Application
1. High speed power switching
Other data sheets within the file : 2SK2529
K2529 Datasheet PDF Download
