D669A Datasheet PDF – 160V, 1.5A, NPN Transistor – Hitachi

This is one of the transistor types.

Part Number: D669A, 2SD669, 2SD669A, D669

Function: 160V, 1.5A, NPN Transistor

Package: TO-126MOD Type

Manufacturer: Hitachi

Image
D669A npn transistor

 

Description

This is 160V, 1.5A, Silicon NPN Epitaxial Transistor.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 180 V

2. Collector to emitter voltage : VCEO = 160 V

3. Emitter to base voltage : VEBO = 5V

4. Collector current IC = 1.5 A

5. Collector peak current : IC(peak) = 3A

 

Pinout

D669A datasheet pinout
Application:

1. Low frequency power amplifier complementary pair with 2SB649 / 2SB649A

D669A Datasheet

 

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K4212 Datasheet – N-Ch, 25V, MOSFET, 2SK4212 – Renesas

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K4212, 2SK4212

Function : Switching N-Channel Power MOSFET

Package: TO-252 Type

Manufacturer: Renesas

Image

k4212-mosfet

 

Description

This is 25V, 48A, MOSFET.

The K4212 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

 

Pinout

k4212-datasheet-pinout

Features

1. Low on-state resistance
(1) RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
(2) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)

2. Low total gate charge :
(1) QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

3. 4.5 V drive available

4. Avalanche capability ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 48 A
4. Total Power Dissipation: Pd = 1 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

K4212 Datasheet

 

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