K2529 Datasheet PDF – 60V, 50A, N-Ch, MOSFET – Hitachi

Part Number : K2529

Function : 50A, 60V, Silicon N-Channel MOSFET

Package : TO-220CFM type

Manufacturers : Hitachi ( Renesas Electronics )

Image

K2529 MOSFET

Features

1. Low on-resistance
2. RDS(on) = 7 mΩ typ.
3. High speed switching
4. 4 V gate drive device can be driven from 5 V source

Pinouts :

K2529 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 174 mJ
8. Channel dissipation : Pch = 35 W

Application

1. High speed power switching

Other data sheets within the file : 2SK2529

K2529 Datasheet PDF Download


K2529 pdf

2SB647 Datasheet PDF – 120V, 1A, Silicon PNP Transistor

Part Number : 2SB647

Function :  120V, 1A, Silicon PNP Epitaxial Transistor

Package : TO-92MOD Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :
2SB647 datasheet

Description :

1. Low frequency power amplifier
2. Complementary pair with 2SD667/A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = – 120 V
2. Collector to emitter voltage : VCEO = – 80 V
3. Emitter to base voltage : VEBO = – 5 V
4. Collector current : IC = – 1 A
5. Collector peak current : IC(peak) = – 2 A
6. Collector power dissipation : PC = 0.9 W

 

Other data sheets within the file : 2SB647A, B647, B647A

 

2SB647 Datasheet PDF Download

2SB647 pdf