Part Number : H20R1203
Function : Reverse conducting IGBT with monolithic body diode
Package : TO247 Package
Manufacturers : Infineon Technologies
See the preview image and the PDF file for more information.
1. Powerful monolithic body diode with low forward voltage designed for soft commutation only
2. Low EMI
3. Qualified according to JESD-022 for target applications
4. Pb-free lead plating; RoHS compliant
5. TRENCHSTOPTM technology applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCEsat
– easy parallel switching capability due to positive temperature coefficient in VCEsat
1. Inductive cooking
2. Inverterized microwave ovens
3. Resonant converters
4. Soft swtiching applications
H20R1203 Datasheet PDF Download
Other data sheets within the file : IHW20N120R3
This post explains for the semiconductor K30N60HS.
The Part Number is K30N60HS.
The function of this semiconductor is SKW30N60HS.
Manufacturers : Infineon
Preview images :
SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff Tj Marking Package SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitte […]