06N03LA Transistor – OptiMOS 2 Power MOSFET

This is one of the transistor types.

Marking : 06N03LA

Part Number : IPB06N03LA

Function : OptiMOS 2 Power-Transistor

Package : TO263 Type

Manufactures : Infineon Technologies AG ( Infineon Technologies Corporation )

Image

06N03LA transistor

Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on)product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv/dt rated

06N03LA Pinouts
 06N03LA Datasheet

 

Characteristics

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDS = 25 V
2. Rds(on) max   = 5.9 mOhm
3. Drain current : ID = 50 A

06N03LA Parameter

06N03LA Datasheet

 

Other Part number in datasheet file : IPB06N03LA, IPI06N03LA, IPP06N03LA

K30H603 Datasheet – 600V, 30A, IGBT (Transistor)

See the preview image and the K30H603 PDF file for more information.

The IGBT is insulated-gate bipolar transistor.

Part Number : IKW30N60H3

Marking No : K30H603

Funtion : 600V High Sspeed Switching Series Third Generation

Package : TO-247 Type

Manufactures : InfineonTechnologies

Image

K30H603 igbt

Description

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast
recovery anti-parallel diode.

Applications

1. uninterruptible power supplies
2. welding converters
3. converters with high switching frequency

Pinout
K30H603 datasheet pinout

Features

TRENCHSTOP technology offering
1. very low VCEsat
2. low EMI
3. Very soft, fast recovery anti-paralleldiode
4. maximum junction temperature 175°C
5. qualified according to JEDEC for target applications
6. Pb-free lead plating;RoHS compliant
7. complete product spectrum and PSpice Models

 

K30H603 Datasheet