International Rectifier Archives

This post explains for the MOSFET.

The Part Number is IRC630. The Package is TO-220 Type

The function of this semiconductor is HEXFET Power MOSFET.

The package is TO-220 Type

Manufacturer: International Rectifier

Preview images :

Description

IRC630 is 200V, 9A, HEXFET Power MOSFET. A HEXFET Power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed for power electronics applications. HEXFET is actually a trademarked term used by the company International Rectifier (now part of Infineon Technologies) to refer to their line of power MOSFETs. The term “HEXFET” stands for “Hexagonal Structure Field-Effect Transistor.”

Third Generation HEXFETs from international Rectifier provide the desinger with the best combination of fast switching, reggedized device design, low on-resistance and cost-effeciveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used of control or protection of the device.

Features:

1. Dynamic dv/dt Rating

2. Repetitive Avalanche Rated

3. Current Sense

4. Fast Switching

5. Ease of Paralleling

6. Simple Drive Requirements

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Total Power Dissipation: Pd =74 W

5. Avalanche energy: Ear = 7.4 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

IRC630 PDF Datasheet

IRL540N is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in electronic circuits as a switch or amplifier.

Function: 100V, 36A, HEXFET MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

For additional details, please refer to the preview image and the accompanying PDF file.

Images

What is IRL540N?

It is designed to handle high currents and voltages, making it suitable for a wide range of applications. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

1. Maximum voltage rating of 100 volts
2. Maximum current rating of 36 amps
3. Low on-resistance (Rds(on))
4. Fast switching speed
5. High input impedance

Advantages

It is high current and voltage handling capabilities, which make it suitable for use in high-power circuits. Its fast switching speed also makes it ideal for use in circuits that require fast switching times.

Disadvantages

Its high input impedance can make it susceptible to electrostatic discharge (ESD) damage, and its sensitivity to voltage spikes and surges may require additional protective measures in some circuits.

Absolute maximum ratings ( Ta=25°C )

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 16 V

3. Drain current: ID = 36 A

4. Power Dissipation: Pd = 140 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRL540