KP11N60 Transistor ( Datasheet PDF ) – MOSFET – KEC

KP11N60 is Super Junction MOSFET. This is kind of a transistor.

Part Number : KP11N60

Function : N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Package : TO-220IS

Manufacturers : KEC

KP11N60 transistor

Pinouts :
KP11N60 datasheet

Description :

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

Features

1. VDSS=600V, ID=11A
2. Drain-Source ON Resistance : RDS(ON)(Max) = 0.38Ω@VGS=10V
3.  Qg(typ.)= 20nC

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID =  11 A
4. Drain power dissipation : PD = 34.7 W
5. Maximum Junction temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C

 

Other data sheets within the file : KP11N60F, KP11N60D

KP11N60 Datasheet PDF Download

KP11N60 pdf

 

A1266 Datasheet PDF – 2SA1266 PNP Transistor – KEC

Part Number : A1266

Function : Silicon PNP Transistor ( PCT Process )

Package : TO-92 Type

Manufacturers : KEC

Pinouts :
A1266 datasheet, Pinout

Applications :

1. Low Frequency Amplifier
2. Low Noise Amplifier

Features

1. Excellent hFE Linerity,  hFE(0.1mA) / hFE(2mA) = 0.95(Typ.)
2. Excellent Safe Operation Area
3. Low Noise : NF = 1dB(Typ), 10db(Max.)
4. Complementary to the 2SC3198

Maximum ratings

1. Collector-Base Voltage : Vcbo = -50 V
2. Collector-Emitter Voltage : Vceo = -50 V
3. Emitter-Base Voltage : Vebo = -5V
4. Collector Current : Ic = -150 mA

A1266 Featurers
Other data sheets within the file : 2SA1266, 2SA1266L, A1266L

A1266 Datasheet PDF Download

A1266 pdf