This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 11 A
4. Drain power dissipation : PD = 34.7 W
5. Maximum Junction temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Other data sheets within the file : KP11N60F, KP11N60D
The KIA494AP/AF incorporates on a single monolithic chip all the functions required in the construction of a pulse-width-modulation control circuit. Designed primarily for power supply control, this device offers the systems engineer the flexibility to tailor the power supply control circuitry to a specific application. The KIA494AP/AF contains two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, a 5-V, 5%-precision requlator, and output-control circuits.
The error amplifiers exhibit a common-mode voltage range from -0.3V to Vcc -2V. The dead-time control comparator has a fixed offset that provides approximately 5% dead time. The on-chip oscillator may be bypassed by terminating RT to the reference output and providing a sawtooth input to CT, or it may drive the common circuits in synchronous multiple-rail power supplies.
The uncommitted output transistors provide either common-emitter or emitter-follower output capability. The KIA494AP/AF provides for push-pull or single-ended output operation, which may be selected through the output-control function. The architecture of this device prohibits the possibility of either output being pulse twice during push-pull operation.