RJH3047 Datasheet PDF – 330V, 50A IGBT – Renesas

Part Number : RJH3047

Function : IGBT, 330V, 50A

Package :  TO-3P Type

Manufacturers : Renesas ( https://www.renesas.com/ )

Description : INSULATED GATE BIPOLAR TRANSISTOR

RJH3047

Silicon N Channel IGBT High Speed Power Switching

Basic Information

1. Production Status : EOL
2. PLP : –
3. Number of Channels : Single
4. Configuration [Device] : B-in FRD
5. VCES (V) : 330
6. Ic (Peak) (A) : 200
7. IC (A) @25 °C : 50
8. VCE (sat) (V) : 1.6
9.  tf (µs) typ. : 0.16

RJH3047DPK Datasheet

RJH3047 Datasheet

RJH3047 Datasheet

 

RJP63F3 Datasheet – Nch IGBT, Vces=630V – Renesas

Part Number : RJP63F3, RJP63F3DPP-M0

Function : 630V, Silicon N Channel IGBT

Package : TO-220FL Type

Manufacturers : Renesas Electronics

Image

RJP63F3 igbt renesas

 

Description :

1. Trench gate and thin wafer technology (G6H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL

 

RJP63F3 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 630 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 40 A
4. Collector peak current : ic(peak) – 200 A
5. Collector dissipation : PC  = 30 W

Applications :

High Speed Power Switching

 

RJP63F3 Datasheet

 

RJP63F3DPP-M0 pdf