ICR18650-30B Datasheet – 2950mAh, Rechargeable Cell – Samsung

This is is a type of lithium-ion rechargeable battery.

Part Number: ICR18650-30B

Function: Lithium-ion Rechargeable Cell, Nominal Capacity : 2950mAh (0.2C, 2.75V discharge)

Cell Dimension : Height : 65.00mm max, Diameter : 18.40mm max

Manufacturer: Samsung


ICR18650-30B samsung



1. Standard Charge

This “Standard Charge” means charging the cell with charge current 1475mA and constant voltage 4.35V at 25℃  for 3hours.

2. Standard Discharge Capacity

The standard discharge capacity is the initial discharge capacity of the cell, which is measured with discharge current of 590mA with 2.75V cut-off at 25℃  within 1hour after the standard charge.

Standard Discharge Capacity    ≥   2850mAh

3. Initial internal impedance

Initial internal impedance measured at AC 1kHz after rated charge.
Initial internal impedance    ≤   100mΩ

4. Temperature Dependence of Discharge Capacity

Capacity comparison at each temperature, measured with discharge constant current 590mA and 2.75V cut-off after the standard charge is as follows.



ICR18650-30B datasheet specs


1. High energy density and high capacity
2. Long cycle life
3. Low self-discharge rate
4. Wide range of operating temperatures


1. Requires a protection circuit to prevent overcharging and over-discharging
2. Can be hazardous if not handled properly
3. More expensive than some other battery types

ICR18650-30B Datasheet


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K6X4008C1F Datasheet PDF – CMOS SRAM, K6X4008CIF

Part Number: K6X4008C1F, K6X4008CIF

Function: 512Kx8 bit Low Power full CMOS Static RAM

Package: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R

Manufacturer: Samsung


K6X4008C1F Image


The K6X4008C1F families are fabricated by SAMSUNGs advanced full CMOS process technology. The families supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.

CMOS Static RAM (SRAM) is a type of computer memory that uses Complementary Metal-Oxide-Semiconductor (CMOS) technology to store digital information.

Unlike dynamic RAM (DRAM) which needs to be constantly refreshed to maintain data, SRAM retains data as long as power is supplied to it. This makes SRAM faster and more reliable than DRAM, although it is also typically more expensive and requires more power.


· Process Technology: Full CMOS
· Organization: 512Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL compatible

Pinout and Block Diagram

K6X4008C1F Datasheet

K6X4008C1F Datasheet PDF


Other Part Number: K6X4008C1F-B, K6X4008C1F-F, K6X4008C1F-Q

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