1. Single N/N type Inverter 2. High Frequency Voltage Mode PWM Control 3. Easy Burst Dimming Control 4. Built-In Soft Strat Function 5. Built-In Low Frequency PWM Generator 6. External UVLO function 7. Latched Mode Protection 8. Adjustable Shut-down time 9. Variable Protection function
The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .