K10A60D Datasheet – Vdss=600V, N Ch MOSFET – Toshiba

Part Number : K10A60D

Function :  Silicon N Channel Power MOSFET Type

Package : TO-220SIS Type

Manufacturers : Toshiba

Image :

K10A60D image

Description :

Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K10A60D Pinout

K10A60D datasheet pinout

K10A60D datasheet

Electrical Characteristics (Ta =25°C)

Other data sheets within the file : K10A60 , TK10A60D

K10A60D Datasheet PDF

K10A60D pdf

 

D718 Datasheet – Vcbo=120V, 8A, NPN Transistor – Toshiba

Part Number : D718

Function : NPN TRIPLE DIFFUSED TYPE Power Transistor

Manufacturers : Toshiba

Package : TO-247, TO-3, 2-16B1A Type

Image :
D718 NPN Transistor

Description :

This transistor designed for use in general-purpose amplifier and switching application.

Features

1. Complementary to 2SB688
2. Recommended for 45 ~ 50W audio frequency amplifier output stage.
3. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.

Maximum Ratings ( Ta=25’C )

1. Collector-Base Voltage : Vcbo = 120V

2. Collector-Emitter Voltage : Vceo = 120V

3. Emitter-Base Voltage : Vebo = 5V

4. Collector Current : Ic = 8A

5. Base Current : Ib = 0.8A

6. Collector Power Dissipation : Pc = 80W

 

Pinout

D718 Datasheet Pinout

Other data sheets within the file : 2SD718

D718 Datasheet

D718 pdf