K3568 Datasheet PDF – N Channel MOSFET – Toshiba

Part Number : K3568

Function : Silicon N Channel MOS Type (π-MOSVI), Field Effect Transistor

Package : TO-220FP-3 Type

Manufacturers : Toshiba

Image

K3568 image

Description

Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 0.4 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3568 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 12 A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 364 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Marking Information

K3568 marking

 

K3568 Datasheet PDF Download

K3568 pdf

 

Other data sheets within the file : 2SK3568

K3667 Datasheet – 600V, N Channel MOSFET – Toshiba

Part Number : K3667, 2SK3667

Function :  N Channel MOSFET ( V dss, V dgr = 600V, Pd = 45 W )

Package : TO-220 Type

Manufactures : Toshiba

Image

K3667 image

Features

1. Low drain-source ON resistance: RDS (ON)= 0.75Ω(typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS= 100μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K3667 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Applications

Switching Regulator

K3667 Datasheet