K10A60W Datasheet – 600V, N-Ch, MOSFET (Transistor)

Part Number : K10A60W, TK10A60W

Function : Silicon N Channel MOS Type Field Effect Transistor

Package : TO-220 Type, SC-67 Type

Manufacturers : Toshiba

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K10A60W MOSFET Toshiba

Description

1. Low drain-source on-resistance : RDS (ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS

2. Easy to control Gate switching

3. Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

 

K10A60W Pinout

K10A60W datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current (Continuous) : ID = 9.7 A
4. Drain current (Pulsed) : IDP = 38.8 A
5. Drain power dissipation (Tc = 25°C) : PD = 30 W
6. Single pulse avalanche energy : EAS = 69 mJ
7. Avalanche current : IAR = 4.9 A
8. Drain reverse current (Continuous) : IDR = 9.7 A
9. Drain reverse current (Pulsed) : IDRP = 38.8 A
10. Channel temperature : Tch = 150 °C
11. Storage temperature range : Tstg = -55 to 150 °C
12. Isolation voltage (t = 1.0s) : VISO(RMS) = 2000 V
13. Mounting torque : TOR = 0.6 N・m

Applications

1. Switching Voltage Regulators

K10A60W Datasheet

 

2SA1943 Datasheet – PNP Transistor, (-)230V, (TO-3P)

Part Number : 2SA1943, A1943

Function : (-) 230V,  PNP TRANSISTOR

Package : TO-3P Type

Manufactures : Toshiba Semiconductor

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2SA1943 image

Features

1. High collector voltage: VCEO= – 230 V (min)
2. Complementary to 2SC5200
3. Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Pinout

2SA1943 Datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = – 230 V
2. Collector to Emitter Voltage : Vceo = – 230 V
3. Emitter to Base Voltage : Vebo = – 5 V
4. Collector Current : Ic = – 15A
5. Total Dissipation : Pc = 150 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

POWER AMPLIFIER

Official Site : http://toshiba.semicon-storage.com/

2SA1943 Datasheet