K2508 PDF Datasheet – 250V, 13A, N-Ch, MOSFET, Transistor

Part Number: K2508, 2SK2508 ( = TK13A25D )

Function: 250V, 13A, N-Channel MOSFET

Package: TO 220, TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Images:

K2508 MOSFET Transistor

Description

K2508 is 250V, 13A, Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.18 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 13 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)

4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS =250 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 250 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C): PD = 45 W

5. Single pulse avalanche energy : EAS = 148 mJ

6. Avalanche current : IAR = 13 A

7. Repetitive avalanche energy : EAR = 4.5 mJ

Pinout

K2508 datasheet pinout

 

Applications:

1. Switching Regulator

2. DC-DC Converter and Motor

K2508 PDF Datasheet

 

Posts related to ‘ MOSFET

Part number Description
K2996 600V, 10A, N-Channel MOSFET
2N5115 P-Ch, MOSFET, Transistor ( PDF )
K2933 MOSFET, 60V, 15A, N-Ch, Transistor
W10NK80Z 9A, 800V, N-Ch, MOSFET
IRF840 N-Ch, 500V, 8A, MOSFET – STMicro
CS20N60 CS20N60 PDF – 600V, 20A, N-Ch, MOSFET, TO-220AB
K3565 900V, 5A, N-Ch, MOSFET – 2SK3565
70T03H 70T03H PDF – 30V, 60A, MOSFET (SSM70T03H)
K3296 20V, 35A, N-Ch, MOSFET – NEC
TSF8N60M 600V, 7.5A, N-Channel MOSFET

 

Related articles across the web

What is K10A60D? – 600V, 10A, N-ch, MOSFET

What is K10A60D?

This post explains for the MOSFET. It is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in a range of electronic circuits, including power supplies, motor control circuits, and audio amplifiers. It is manufactured by several semiconductor companies and is widely available in the market.

The Part Number is K10A60D.

The Pacakge is TO-220 Type.

The function of this semiconductor is 600V, 10A, N-Channel MOSFET.

Manufacturer: Toshiba

Preview images :

1 page
mosfet K10A60D pdf datasheet

Description

The K10A60D is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor.

The MOSFET has a number of features that make it popular in electronic circuits, including its high voltage capability, low on-resistance, and fast switching speed. It also has a low gate-to-source threshold voltage, which means it can be easily controlled by low voltage signals.

It is typically used in a variety of circuits, such as in switching power supplies where it is used to control the flow of current to the load. It is also commonly used in audio amplifiers where it can deliver high output power with low distortion.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K10A60D transistor equivalent

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

 

Other data sheets are available within the file:

K10A600, TK10A60D, TK10A600

K10A60D PDF Datasheet