30F126 Datasheet PDF – 330V, 200A – Toshiba IGBT

This is a kind of IGBT. The IGBT is insulated-gate bipolar transistor.

PartNumber : 30F126, GT30F126

Manufactuers : Toshiba

Package : TO-220F Type

Description : LCD Plasma common tube TO-220F, IGBT  200A / 330V IGBT

Image :

30F126 Image

30F126 Datasheet

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

30F126 Datasheet


Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131)

Reference Datasheet Download : [ 30F124.pdf ]

IGBT Datasheet

On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques.

K13A600 Datasheet – Vdss=600V, N-Ch MOSFET – Toshiba

This is Silicon N Channel MOSFET Transistor.

Part Number : K13A600, TK13A600

Correct Number : K13A60D, TK13A60D

Package : TO-220 Type

Manufacturers : Toshiba

Image :

K13A600 mosfet

Description :

Switching Regulator Applications

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


Pinouts :

K13A600 datasheet pinout

Absolute Maximum Ratings ( Ta = 25º C )

1. Drain-source voltage : VDSS = 600 V
2. Drain power dissipation :  PD = 50 W
3. Single pulse avalanche energy : Eas = 511 mJ
4. Channel temperature : Tch = 150 °C
5. Storage temperature range : Tstg = -55 to 150 °C


Electrical Characteristics

K13A600 Marking


K13A600 Datasheet


K13A600 pdf