J412 PDF Datasheet – P-ch, 100V, MOSFET – 2SJ412 – Toshiba

This post explains for the MOSFET.

The Part Number is J412, 2SJ412.

The function of this semiconductor is P-Channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page
2SJ412 pdf transistor

Description

J412 transistor is -100V, -16A, P-Channel MOSFET.

This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.

The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.

The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.

Features

1. 4-V gate drive

2. Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)

3. High forward transfer admittance: |Yfs| = 7.7 S (typ.)

4. Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)

5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

2SJ412 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 16 A

4. Drain Power Dissipation: Pd = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. DC-DC Converter

2. Relay Drive and Motor Drive

J412 Datasheet

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K2962 PDF Datasheet – 100V, 1A, N-ch, MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K2962, 2SK2962.

The function of this semiconductor is 100V, 1A, N-channel MOSFET.

The package is TO-92 Type

Manufacturer: Toshiba Semiconductor

Preview images :

1 page
K2962 mosfet pinout

Description

K2962 is 100V, 1A, N-channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. 4-V gate drive

2. Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.)

3. High forward transfer admittance : |Yfs| = 1.2 S (typ.)

4. Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)

5. Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) […]

2 page
K2962 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 1 A

4. Drain Power Dissipation: Pd = 0.9 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Chopper Regulator

2. DC−DC Converter and Motor Drive

K2962 PDF Datasheet

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