TB1226EN Datasheet PDF – Signal processing IC – Toshiba

Part Number : TB1226EN

Function : Signal processing IC

Package : DIP 56 Pin

Manufacturers : Toshiba

Image :
TB1226EN datasheet

Description :

VIDEO, CHROMA AND SYNCHRONIZING SIGNALS PROCESSING IC FOR PAL / NTSC / SECAM SYSTEM COLOR TV

TB1226EN that is a signal processing IC for the PAL / NTSC / SECAM color TV system integrates video, chroma and synchronizing signal processing circuits together in a 56-pin shrink DIP plastic package. TB1226EN incorporates a high performance picture quality compensation circuit in the video section, an automatic PAL / NTSC / SECAM discrimination circuit in the chroma section, and an automatic 50 / 60Hz discrimination circuit in the synchronizing section. Besides a crystal oscillator that internally generates 4.43MHz, 3.58MHz and M / N-PAL clock signals for color demodulation, there is a horizontal PLL circuit built in the IC.

Video section

1. Built-in trap filter
2. Black expansion circuit
3. Variable DC regeneration rate
4. Y delay line
5. Sharpness control by aperture control
6. γ correction

Chroma section

1. Built-in 1H Delay circuit
2. PAL / SECAM base band demodulation system
3. One crystal color demodulation circuit (4.43MHz, 3.58MHz, M / N-PAL)
4. Automatic system discrimination, system forced mode
5. 1H delay line also serves as comb filter in NTSC demodulation
6. Built-in band-pass filter, SECAM bell filter
7. Color limiter circuit

Other data sheets within the file : TB1226E, TB1226

TB1226EN Datasheet PDF Download

TB1226EN pdf

 

K1117 Datasheet PDF – 600V, N-Channel MOSFET – Toshiba

Part Number : K1117

Function : V dss = 600V, N-Channel MOSFET

Package : TO-220AB Type

Manufacturers : Toshiba

Image :

K1117 datasheet

Description :

Field Effect Transistor

1. Silicon N-Channel MOS Type
2. High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications.

Pinout

Absolute Maximum Ratings (Ta = 25°C)

Drain to source voltage : VDSS = 600 V
Gate to source voltage : VGSS = 600 V
Drain peak current : ID(pulse) = 6 A
Drain current : IDR = 24 A
Drain Power dissipation : Pd = 100 W
Channel temperature : Tch = 100 °C
Storage temperature : Tstg = -55 ~ +150 °C

Other data sheets within the file : 2SK1117

K1117 Datasheet PDF Download

K1117 pdf

Posts related to ‘ FET

Part numberDescription
FTW20N50AFTW20N50A – N-Channel MOSFET
CS20N50CS20N50 – Silicon N-Channel Power MOSFET
2SK134140V, N-Channel, MOSFET
MT324545V, 120A, Nch MOSFET
72T02GH72T02GH Nch Power MOSFET – AP72T02GH Datasheet
4511GHN And P-Ch Mode Power MOSFET
CM20N50FN-Channel, 500V, MOSFET
40N03GP40N03GP – N-channel Enhancement-mode Power MOSFET
1D0N60D600V, 1A, N-ch, MOSFET – KEC
MDF11N60600V, 11A, N-Ch MOSFET – Magnachip