Part Number : CEP6060R
Description : 60V, 60A, N-Channel FET
Package : TO-220, TO-263 Type
Manufactures : Chino-Excel Technology
Image and Pinouts :
Description :
This is 60V, 60A, N-Channel Enhancement Mode Field Effect Transistor.
Features :
Features
1. 60V , 60A , RDS(ON)=25m @VGS=10V.
2. Super high dense cell design for extremely low RDS(ON).
3. High power and current handling capability.
4. Lead free product is acquired
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 50 A
4. Maximum Power Dissipation : Pd = 88 W
5. Channel temperature : Tch = 175 °C
6. Storage temperature : Tstg = -55 to +175 °C
