Part Number: CS2N60F
Function: 600V, 2A, N-Channel Power MOSFET / VDMOSFET
Package: TO-220F type
Manufacturer: HUAJING MICROELECTRONICS
Pinouts
Description
This is 600V, 2A, Silicon N-channel MOSFET.
The silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features
1. Fast Switching
2. Low ON Resistance( Rdson≤4.5Ω )
3. LowGate Charge ( Typical Data : 8.5nC )
4. Low Reversetransfer capacitances ( Typical : 5.4pF )
5.100% Single Pulse avalanche energy Test
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Drain Power Dissipation: Pd = 24 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power switch circuit of adaptor and charger
CS2N60F Datasheet PDF Download
Other data sheets are available within the file: CS2N60FA9H