This is npn transistor.
Part Number: D1047
Function: 140V, 12A, High power NPN epitaxial planar bipolar transistor
Package: TO-3P Type
Manufacturer: STMicroelectronics
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Description
D1047 is High power NPN epitaxial planar bipolar transistor.
Features
1. High breakdown voltage VCEO = 140 V
2. Typical ft = 20 MHz
3. Fully characterized at 125 oC Application
4. Power supply Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ____max 2SD1047 Value 200 140 6 12 20 100 -65 to 150 150 Unit V V V A A W °C °C Value 1.25 Unit °C/W 2/10 Doc ID 018729 Rev 1 2SD1047 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 200 V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 0.1 µA V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = 50 mA 140 V V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA 200 V V(BR)EBO(1) Emitter-base breakdown voltage (IC = 0) IE = 1 mA 6 V VCE(sat)(1) Collector-emitter saturation […]