Part Number: D1651, 2SD1651
Function: 800V, 5A, Silicon NPN Transistor
Package: TO-3PML Type
Manufacturer: Wing Shing Computer Components
Images:
Description
D1651 is 800V, 5A, Silicon NPN Power Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
Features
1. High Breakdown Voltage- : VCBO= 1500V (Min)
2. High Switching Speed ·High Reliability
3. Built-in Damper Diode
4. Minimum Lot-to-Lot variations for robust device performance and reliable operation
Applications:
1. Designed for color TV horizontal deflection output applicaitions
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 5 A
5. Collector Dissipation : Pc = 60 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C