D2012 Datasheet – Vcbo=60V, NPN Transistor – Toshiba

Part Number : D2012, 2SD2012

Function :  Silicon NPN Triple Diffused Type Transistor

Manufactures : Toshiba Semiconductor

Image

D2012 transistor

Description

Audio Frequency Power Amplifier Applications

1. Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A)

2. High power dissipation: PC= 25 W (Tc = 25°C)

Pinout
D2012 datasheet pinout
Absolute Maximum Ratings

1. Collector-base voltage : VCBO = 60 V

2. Collector-emitter voltage : VCEO = 60 V

3. Emitter-base voltage : VEBO = 7 V

4. Collector current : IC = 3 A

5. Base current : IB = 0.5 A

D2012 Datasheet