Part Number: D2012
Function: 50V, 3A, NPN Transistor
Manufacturer: Wuxi Youda Electronics
Images:
Description
D2012 is 50V, 3A, NPN TRANSISTOR. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
When a small current is applied to the base, it controls a much larger current between the collector and emitter, making the NPN transistor an effective amplifier or switch.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation : Pc = 30 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Features:
1. Collector-Emitter voltage: BVCBO= 60V
2. Collector current up to 3A
3. High hFE linearity
D2012 PDF Datasheet
