Part Number: D2395, 2SD2395
Function: 50V, 3A, NPN Transistor
Package: TO-220FN Type
D2395 is 50V, 3A, NPN Silicon Epitaxial Planar Transistor. This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. Low VCE (sat).
2. Wide SOA.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
1. Relay drive
2. DC-DC converter
3. Stabilized power supply