Part Number: D600, 2SD600
Function: 100V, 1A, NPN transistor
Package: TO-126 Type
Manufacturer: Sanyo Semicon Device
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Description
This is 100V, 1A, NPN Epitaxial Planar Silicon Transistor.
Features
· High breakdown voltage VCEO 100V, High current 1A.
· Low saturation voltage, excellent hFE linearity
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Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 100 V
2. Collector to Emitter Voltage: Vceo = 200 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1 A
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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D600 Datasheet
