Part Number: D669, 2SD669
Function: 120V, 1.5A, NPN Transistor
Package: TO-126 MOD Type
Manufacturer: Hitachi Semiconductor
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Description
This is Silicon NPN Epitaxial Transistor .
Application:
Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 123
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 180 V
2. Collector to Emitter Voltage: Vceo = 120 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1.5 V
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows. 2. Pulse test. Unit Test conditions V IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 µA V V MHz pF VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz 2SD669 2SD669A B 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 3 (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 DC Operation(TC = 25°C) 0.1 (120 V, 0.04 A) 0.03 (160 V, 0.02A) 2SD669 2SD669A 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Collector current IC (A) Typical Output Characteristecs 1.0 0.8 0.6 5.5 5.40.54.0 3.5 3.0 2.5 2.0 TC = 25°C P C = 20 W 1.5 0.4 1.0 0.2 0.5 mA IB = 0 0 10 20 30 40 50 Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 75°C 25 –25 Typical Transfer Characteristics 500 200 VCE = 5 V 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) DC current transfer ratio hFE DC Current Transfer Ratio vs. Collector Current 300 Ta = 75°C 250 25 200 150 –25 100 50 VCE = 5 V 1 1 3 10 30 100 300 1,000 3,000 Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector current IC (mA) T C= –2525 75°C 4 Base to emitter saturation vol […]
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