Part Number: D669A, 2SD669A
Function: 160, 1.5A, Silicon NPN Epitaxial Transistor
Package: TO-126MOD Type
Manufacturer: Hitachi Semiconductor
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Description
D669A transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to base voltage : VCBO = 180 V
2. Collector to emitter voltage : VCEO = 160 V
3. Emitter to base voltage : VEBO = 5 V
4. Collector current : IC = 1.5 A
5. Collector peak current : IC(peak) = 3 A
6. Collector power dissipation : PC = 1 W
7. Junction temperature : Tj = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
Application
1. Low frequency power amplifier complementary pair with 2SB649 / 2SB649A
D669A PDF Datasheet
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